# Differences

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 physicswiki:semiconductors:ninresistor:ninresistor [2019/04/09 09:34]zoltan.jehn physicswiki:semiconductors:ninresistor:ninresistor [2019/04/09 10:38]zoltan.jehn 2019/04/09 12:08 zoltan.jehn 2019/04/09 10:38 zoltan.jehn 2019/04/09 09:34 zoltan.jehn 2019/04/09 07:14 zoltan.jehn created 2019/04/09 12:08 zoltan.jehn 2019/04/09 10:38 zoltan.jehn 2019/04/09 09:34 zoltan.jehn 2019/04/09 07:14 zoltan.jehn created Last revision Both sides next revision Line 47: Line 47: The three methods tat we are using: The three methods tat we are using: - \begin{itemize} + - \item \textbf{NEGF} We calculate the electron density from the correlation function $G_n$, which we calculated self consistently with the potential in the device, according to ref(Datta), with the kinetic equation. + * **NEGF** We calculate the electron density from the correlation function $G_n$, which we calculated self consistently with the potential in the device, according to ref(Datta), with the kinetic equation. - \item \textbf{Classical} It simply assumes that the electron density is defined by the local potential, and fermi level. It doesn'​t take the Quantum mechanical effects into account. + * **Classical** It simply assumes that the electron density is defined by the local potential, and fermi level. It doesn'​t take the Quantum mechanical effects into account. - \item \textbf{Schrodinger equation with effective mass} According to this method we calculate the eigenfunctions in the device, and we calculate the 2 dimensional density of states locally in the sample, respecting these eigenfunctions. The population of these states are simply following the fermi-statistics. + * **Schrodinger equation** with effective mass} According to this method we calculate the eigenfunctions in the device, and we calculate the 2 dimensional density of states locally in the sample, respecting these eigenfunctions. The population of these states are simply following the fermi-statistics. - \end{itemize} + The calculated profiles with the different methods are depicted in figure 3. It shows that in equilibrium all three methods converges for the same results. The Schrödinger equation based method converges at the boundary to oscillatory solutions, which can be the result of the boundary conditions. The calculated profiles with the different methods are depicted in figure 3. It shows that in equilibrium all three methods converges for the same results. The Schrödinger equation based method converges at the boundary to oscillatory solutions, which can be the result of the boundary conditions.
• physicswiki/semiconductors/ninresistor/ninresistor.txt