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In the semiconductor toolbox the following models can be used in order to calculate the chosen properties of the semiconductor structure.

  • Band Structure calculation: Calculates the band structure of the device according to the selected models considering internal or external strain.
  • Occupation calculation: Finds the properties of the device in equilibrium, including thermal and quantum mechanical effects.
  • Device calculation: Finds the properties of the device out of equilibrium solving the drift diffusion equations self consistently with the band structure and occupation calculation.

1D Simulations

Examples

Schottky Contact

K-Space dispersion

GaAs/AlAs Quantum Well

LED simulation p-i-n

Zinc-blende Piezo Field

Type-II Super-lattice

Quantum Well interband absorption

Electron ground state energy dependence on alloy composition

Superlattice dispersion

Optical selection rules in QW

Double barrier tunneling

Resonant Tunnel diode

InGaN-delta-InN quantum well

Gain calculation

2DEG

VCSEL

Eigenfunctions in a Quantum Well

Diode Characteristics

Nitride based LED

Arsenide based LED

n-i-n resistor

MOS Capacitor

2D Simulations

Examples

Quantum Wire 2D

Hexagonal Quantum Wire

Bipolar Junction Transitor

GaAs FET

JFET

MOSFET

HEMT

Double Gate MOSFET

3D Simulations

Examples

Tetrahedral Quantum Dot

GaSb QD lattice absorption spectra

QD superlattice dispersion

Quantum confined stark effect in a QD

Piezo charge density in a spherical QD

  • physicswiki/semiconductors.1554829784.txt.gz
  • Last modified: 2019/04/09 13:09
  • by zoltan.jehn