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physicswiki:semiconductors:band_structure [2017/04/02 09:07]
zoltan.jehn [Effects of strain]
physicswiki:semiconductors:band_structure [2019/04/07 21:56] (current)
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 |Pv_y| $C/m^2$ | Pyro polarization y direction (for ZB 0)| Pv_y_MATERIAL_INTERNAL | |Pv_y| $C/m^2$ | Pyro polarization y direction (for ZB 0)| Pv_y_MATERIAL_INTERNAL |
 |Pv_z| $C/m^2$ | Pyro polarization z direction (for ZB 0)| Pv_z_MATERIAL_INTERNAL | |Pv_z| $C/m^2$ | Pyro polarization z direction (for ZB 0)| Pv_z_MATERIAL_INTERNAL |
-|auger| $m^6/s$ | Auger recombination coefficient| ​auger_MATERIAL_INTERNAL ​|+|direct| $m^6/s$ | Direct ​recombination coefficient| ​direct_MATERIAL_INTERNAL ​|
 |e_optical| $1$ | Optical dielectric constant| eoptical_MATERIAL_INTERNAL | |e_optical| $1$ | Optical dielectric constant| eoptical_MATERIAL_INTERNAL |
 </​table>​ </​table>​
Line 131: Line 131:
 |Pv_y| $C/m^2$ | Pyro polarization y direction| Pv_y_MATERIAL_INTERNAL | |Pv_y| $C/m^2$ | Pyro polarization y direction| Pv_y_MATERIAL_INTERNAL |
 |Pv_z| $C/m^2$ | Pyro polarization z direction| Pv_z_MATERIAL_INTERNAL | |Pv_z| $C/m^2$ | Pyro polarization z direction| Pv_z_MATERIAL_INTERNAL |
-|auger| $m^6/s$ | Auger recombination coefficient| ​auger_MATERIAL_INTERNAL ​|+|direct| $m^6/s$ | Direct ​recombination coefficient| ​direct_MATERIAL_INTERNAL ​|
 |e_optical| $1$ | Optical dielectric constant| eoptical_MATERIAL_INTERNAL | |e_optical| $1$ | Optical dielectric constant| eoptical_MATERIAL_INTERNAL |
 </​table>​ </​table>​
  • physicswiki/semiconductors/band_structure.txt
  • Last modified: 2019/04/07 21:56
  • (external edit)