In this example we show, how can a Quantum Dot be simulated in the XienceSim environment. This tutorial is based the following publication:

Pryor, Craig. “Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations.” Physical Review B 57.12 (1998): 7190.

### Geometry

The simulation geometry was a tetrahedron with $b=10nm$ side length, and $h=8nm$ height embedded in a cube, which has $c=30nm$ side length. The geometry is shown in Figure 1.

### Material

The material of the tetrahedron is pure $InAs$, while the surrounding cube is built up from pure $GaAs$, as it is shown in Figure 2.

### Physics

We used the Bandstructure Calculator study for ZincBlende structure at the $\Gamma$ point (6 band $k.p$ method), with strain included One side of the cube was set to be fixed, in order to ensure the Dirichlet boundary condition.

### Results

The band structure is plotted on Figure 3. along the center of the device in the $z$ direction.