In this example we show, how can a Quantum Dot be simulated in the XienceSim environment. This tutorial is based the following publication:

Pryor, Craig. “Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations.” Physical Review B 57.12 (1998): 7190.


The simulation geometry was a tetrahedron with $b=10nm$ side length, and $h=8nm$ height embedded in a cube, which has $c=30nm$ side length. The geometry is shown in Figure 1.

Figure 1. Tetrahedron embedded in a cube


The material of the tetrahedron is pure $InAs$, while the surrounding cube is built up from pure $GaAs$, as it is shown in Figure 2.

Figure 2. Tetrahedron embedded in a cube


We used the Bandstructure Calculator study for ZincBlende structure at the $\Gamma$ point (6 band $k.p$ method), with strain included One side of the cube was set to be fixed, in order to ensure the Dirichlet boundary condition.


The band structure is plotted on Figure 3. along the center of the device in the $z$ direction.

Figure 1. Band structure along the $z$ direction

The project file can be downloaded from here

  • physicswiki/semiconductors/tetrahedral_qd.txt
  • Last modified: 2019/04/07 21:56
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